Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar RF Transistors

PBR941B,215

Banner
productimage

PBR941B,215

RF TRANS NPN 10V 9GHZ TO236AB

Manufacturer: NXP USA Inc.

Categories: Bipolar RF Transistors

Quality Control: Learn More

NXP USA Inc. PBR941B-215 is an NPN bipolar RF transistor designed for high-frequency applications. This component features a collector-emitter breakdown voltage of 10V and a maximum collector current (Ic) of 50mA. It offers a minimum DC current gain (hFE) of 100 at 5mA and 6V, with a transition frequency (fT) of 9GHz. The transistor dissipates a maximum power of 360mW and operates across a temperature range of up to 150°C (TJ). Packaged in a SOT-23 (TO-236AB) surface mount configuration, it is supplied on tape and reel. Typical noise figure is between 1.5dB and 2.5dB at 1GHz. This device finds application in various RF circuits within the telecommunications and wireless infrastructure industries.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain-
Power - Max360mW
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)10V
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 5mA, 6V
Frequency - Transition9GHz
Noise Figure (dB Typ @ f)1.5dB ~ 2.5dB @ 1GHz
Supplier Device PackageSOT-23 (TO-236AB)

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
BLT70,115

RF TRANS NPN 8V 900MHZ SOT223

product image
BFU550AR

RF TRANS NPN 12V 11GHZ TO236AB

product image
BFG505/X,215

RF TRANS NPN 15V 9GHZ SOT143B