PBR941,215
RF TRANS NPN 10V 8GHZ TO236ABManufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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The NXP USA Inc. PBR941-215 is an NPN bipolar RF transistor designed for high-frequency applications. This component offers a collector-emitter breakdown voltage of 10V and a maximum collector current (Ic) of 50mA. It features a transition frequency of 8GHz, making it suitable for RF amplification and switching circuits. The transistor exhibits a minimum DC current gain (hFE) of 50 at 5mA and 6V. With a maximum power dissipation of 360mW, it operates effectively across a wide temperature range up to 175°C (TJ). Packaged in a compact SOT-23 (TO-236AB) surface-mount format, this device is supplied on tape and reel. The PBR941-215 demonstrates a typical noise figure ranging from 1.4dB to 2dB across frequencies of 1GHz to 2GHz, finding application in wireless communication systems and test equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 175°C (TJ) |
| Gain | - |
| Power - Max | 360mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 6V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 1.4dB ~ 2dB @ 1GHz ~ 2GHz |
| Supplier Device Package | SOT-23 (TO-236AB) |
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