NXP USA Inc. presents the MX0912B351Y-114, an RF Power Transistor. This NPN bipolar transistor, packaged in a SOT439A (LFPAK33) footprint, is engineered for demanding high-frequency applications. Optimized for performance in the 900 MHz to 1200 MHz range, it delivers robust power amplification capabilities. Its robust construction and advanced semiconductor technology ensure reliability and efficiency in wireless infrastructure, base stations, and general-purpose RF power amplification systems. The MX0912B351Y-114 is supplied in tray packaging for efficient integration into automated manufacturing processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tray