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MBC13900T1

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MBC13900T1

RF TRANS NPN 6.5V 15GHZ SOT343

Manufacturer: NXP USA Inc.

Categories: Bipolar RF Transistors

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NXP USA Inc. MBC13900T1 is an NPN bipolar RF transistor engineered for high-frequency applications. This surface-mount component, housed in an SOT-343 package, offers a collector-emitter breakdown voltage of 6.5V and a maximum collector current of 20mA. The transition frequency (fT) reaches 15GHz, with a typical gain range of 15dB to 22dB. Noise figure is optimized, measuring 0.8dB to 1.1dB at frequencies between 900MHz and 1.9GHz. The device supports a maximum power dissipation of 188mW and operates at an elevated junction temperature of 150°C. This component is suitable for use in wireless infrastructure and RF front-end modules.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-82A, SOT-343
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain15dB ~ 22dB
Power - Max188mW
Current - Collector (Ic) (Max)20mA
Voltage - Collector Emitter Breakdown (Max)6.5V
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 5mA, 2V
Frequency - Transition15GHz
Noise Figure (dB Typ @ f)0.8dB ~ 1.1dB @ 900MHz ~ 1.9GHz
Supplier Device PackageSOT-343

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