BLT81,115
RF TRANS NPN 9.5V 900MHZ SOT223Manufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. BLT81-115 is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount device, packaged in an SC-73 (TO-261-4, TO-261AA), operates at a collector emitter breakdown voltage of 9.5V and can handle a maximum collector current of 500mA. It exhibits a minimum DC current gain (hFE) of 25 at 300mA, 5V, and achieves a gain of 8dB at 900MHz. With a transition frequency of 900MHz and a maximum power output of 2W, the BLT81-115 is suitable for use in wireless communication systems and other RF power amplification circuits operating at these frequencies. The component is supplied on tape and reel (TR) and is rated for an operating temperature up to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 175°C (TJ) |
| Gain | 8dB |
| Power - Max | 2W |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 9.5V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 300mA, 5V |
| Frequency - Transition | 900MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | SC-73 |
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