BLT80,115
RF TRANS NPN 10V 900MHZ SOT223Manufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. BLT80-115 is an NPN bipolar RF transistor designed for demanding applications. This component delivers 2W of power with a collector current capability of 250mA. Operating at a frequency transition of 900MHz, it features a collector-emitter breakdown voltage of 10V. The device exhibits a minimum DC current gain (hFE) of 25 at 150mA and 5V.
The BLT80-115 is housed in a TO-261-4, TO-261AA (SC-73) surface mount package, supplied on tape and reel for efficient assembly. Its robust construction allows for operation in environments up to 175°C (TJ). This transistor is suitable for use in various RF power amplification and switching circuits across wireless infrastructure and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 175°C (TJ) |
| Gain | - |
| Power - Max | 2W |
| Current - Collector (Ic) (Max) | 250mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 150mA, 5V |
| Frequency - Transition | 900MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | SC-73 |
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