BLT70,115
RF TRANS NPN 8V 900MHZ SOT223Manufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. BLT70-115 is an NPN bipolar RF transistor designed for high-frequency applications. This component operates at a collector current of up to 250mA with a collector-emitter breakdown voltage of 8V. It features a transition frequency of 900MHz and a maximum power dissipation of 2.1W. The BLT70-115 exhibits a minimum DC current gain (hFE) of 25 at 100mA and 4.8V. Supplied in a surface mount SC-73 package (TO-261-4, TO-261AA), it is available on tape and reel. This transistor is suitable for use in wireless communications infrastructure and other RF power amplifier designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 175°C (TJ) |
| Gain | - |
| Power - Max | 2.1W |
| Current - Collector (Ic) (Max) | 250mA |
| Voltage - Collector Emitter Breakdown (Max) | 8V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 100mA, 4.8V |
| Frequency - Transition | 900MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | SC-73 |
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