BLT50,115
RF TRANS NPN 10V 470MHZ SOT223Manufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
Quality Control: Learn More
NXP USA Inc. BLT50-115 is an NPN bipolar RF transistor designed for high-frequency applications. This component operates with a collector-emitter breakdown voltage of 10V and a maximum collector current of 500mA. It offers a transition frequency of 470MHz and a power dissipation capability of 2W. The BLT50-115 features a DC current gain (hFE) of a minimum of 25 at 300mA and 5V. Manufactured by NXP USA Inc., it is supplied in a SC-73 package, equivalent to TO-261-4 or TO-261AA, for surface mounting. The device is delivered on tape and reel (TR). This RF transistor is suitable for use in telecommunications and wireless infrastructure.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 175°C (TJ) |
| Gain | - |
| Power - Max | 2W |
| Current - Collector (Ic) (Max) | 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 300mA, 5V |
| Frequency - Transition | 470MHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | SC-73 |
Request a Quote
Clients Also Buy
BLT70,115
RF TRANS NPN 8V 900MHZ SOT223
BFU550AR
RF TRANS NPN 12V 11GHZ TO236AB
BFG505/X,215
RF TRANS NPN 15V 9GHZ SOT143B
