BLS3135-65,114
RF TRANS NPN 75V 3.5GHZ CDFM2Manufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. BLS3135-65-114 is an NPN RF Power Transistor designed for high-frequency applications. This component operates with a collector-emitter breakdown voltage of 75V and can handle a maximum collector current of 8A. Featuring a transition frequency of 3.5GHz and a gain of 7dB, it is suitable for demanding RF power amplification stages. The transistor delivers 200W of power and is constructed for chassis mounting in a CDFM2 package (SOT-422A). With a high operating junction temperature of 200°C and a minimum DC current gain (hFE) of 40 at 2A and 5V, the BLS3135-65-114 is utilized in various high-power RF systems, including base station infrastructure and industrial RF heating applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | SOT-422A |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 7dB |
| Power - Max | 200W |
| Current - Collector (Ic) (Max) | 8A |
| Voltage - Collector Emitter Breakdown (Max) | 75V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 2A, 5V |
| Frequency - Transition | 3.5GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | CDFM2 |
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