BLS3135-10,114
RF TRANS NPN 75V 3.5GHZ CDFM2Manufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. BLS3135-10-114 is an NPN RF Power Transistor designed for high-frequency applications. This component features a collector current (Ic) capability of 1.5A and a minimum DC current gain (hFE) of 40 at 250mA and 5V. With a transition frequency of 3.5GHz and a gain of 9dB, it is suitable for demanding RF power amplification stages. The transistor operates at a maximum power output of 34W and can withstand a collector emitter breakdown voltage of 75V. Mounting is facilitated via its chassis mount capability, utilizing the CDFM2 package. The BLS3135-10-114 is typically employed in base station infrastructure and general-purpose RF power applications. It is supplied in Tray packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | SOT-445C |
| Mounting Type | Chassis Mount |
| Transistor Type | NPN |
| Operating Temperature | 200°C (TJ) |
| Gain | 9dB |
| Power - Max | 34W |
| Current - Collector (Ic) (Max) | 1.5A |
| Voltage - Collector Emitter Breakdown (Max) | 75V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 250mA, 5V |
| Frequency - Transition | 3.5GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | CDFM2 |
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