Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar RF Transistors

BLS2731-10,114

Banner
productimage

BLS2731-10,114

RF TRANS NPN 75V 3.1GHZ CDFM2

Manufacturer: NXP USA Inc.

Categories: Bipolar RF Transistors

Quality Control: Learn More

NXP USA Inc. BLS2731-10-114 is an NPN RF bipolar power transistor designed for high-power applications. Featuring a 75V collector-emitter breakdown voltage and capable of handling up to 1.5A collector current, this device offers 145W of power output. It operates at frequencies up to 3.1GHz with a typical gain of 10dB. The SOT-445C package, supplied in Tray, is designed for chassis mounting, facilitating effective thermal management. The BLS2731-10-114 exhibits a minimum DC current gain of 40 at 250mA and 5V. This component is suitable for use in demanding communication systems and power amplification circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tray
Technical Details:
PackagingTray
Package / CaseSOT-445C
Mounting TypeChassis Mount
Transistor TypeNPN
Operating Temperature200°C (TJ)
Gain10dB
Power - Max145W
Current - Collector (Ic) (Max)1.5A
Voltage - Collector Emitter Breakdown (Max)75V
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 250mA, 5V
Frequency - Transition3.1GHz
Noise Figure (dB Typ @ f)-
Supplier Device PackageCDFM2

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
BLT70,115

RF TRANS NPN 8V 900MHZ SOT223

product image
BFU550AR

RF TRANS NPN 12V 11GHZ TO236AB

product image
BFG505/X,215

RF TRANS NPN 15V 9GHZ SOT143B