BFU725F,115
RF TRANS NPN 2.8V 70GHZ 4DFPManufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. BFU725F-115 is an NPN bipolar RF transistor designed for high-frequency applications. This component offers a transition frequency of 70GHz and a maximum collector current of 40mA, with a collector-emitter breakdown voltage of 2.8V. It delivers a gain range from 10dB to 24dB and features a low noise figure, typically 0.42dB at 1.5GHz up to 1.1dB at 12GHz. The device supports a maximum power dissipation of 136mW and a minimum DC current gain (hFE) of 300 at 10mA and 2V. Operating at a junction temperature up to 150°C, it is provided in a 4-DFP surface mount package, supplied on tape and reel. This transistor is suitable for use in advanced wireless communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-343F |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 10dB ~ 24dB |
| Power - Max | 136mW |
| Current - Collector (Ic) (Max) | 40mA |
| Voltage - Collector Emitter Breakdown (Max) | 2.8V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 10mA, 2V |
| Frequency - Transition | 70GHz |
| Noise Figure (dB Typ @ f) | 0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz |
| Supplier Device Package | 4-DFP |
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