BFT93W,115
RF TRANS PNP 12V 4GHZ SOT323-3Manufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. BFT93W-115 is a PNP bipolar RF transistor designed for high-frequency applications. This component features a 12V collector-emitter breakdown voltage and a maximum collector current of 50mA. With a transition frequency of 4GHz and a maximum power dissipation of 300mW, the BFT93W-115 is suitable for demanding RF circuits. It offers a minimum DC current gain (hFE) of 20 at 30mA and 5V. The noise figure is typically between 2.4dB and 3dB across a frequency range of 500MHz to 1GHz. Housed in an SC-70 (SOT-323) surface mount package, this transistor is supplied on tape and reel. Applications include wireless communication systems and other RF front-end circuitry. The operating junction temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 30mA, 5V |
| Frequency - Transition | 4GHz |
| Noise Figure (dB Typ @ f) | 2.4dB ~ 3dB @ 500MHz ~ 1GHz |
| Supplier Device Package | SC-70 |
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