BFT93,215
RF TRANS PNP 12V 5GHZ TO236ABManufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. BFT93-215 is a PNP bipolar RF transistor designed for high-frequency applications. This component features a 12V collector-emitter breakdown voltage and a maximum collector current of 35mA. With a transition frequency of 5GHz and a maximum power dissipation of 300mW, it is suitable for demanding RF designs. The device exhibits a minimum DC current gain (hFE) of 20 at 30mA and 5V, and a typical noise figure of 2.4dB at 500MHz. Packaged in a SOT-23 (TO-236AB) surface mount configuration and supplied on tape and reel, the BFT93-215 operates at elevated temperatures, with an operating junction temperature of 175°C. This transistor finds application in wireless communications and RF amplification circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 175°C (TJ) |
| Gain | - |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 35mA |
| Voltage - Collector Emitter Breakdown (Max) | 12V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 30mA, 5V |
| Frequency - Transition | 5GHz |
| Noise Figure (dB Typ @ f) | 2.4dB @ 500MHz |
| Supplier Device Package | SOT-23 (TO-236AB) |
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