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BFT25A,215

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BFT25A,215

RF TRANS NPN 5V 5GHZ TO236AB

Manufacturer: NXP USA Inc.

Categories: Bipolar RF Transistors

Quality Control: Learn More

NXP USA Inc. BFT25A-215 is a high-frequency NPN bipolar RF transistor designed for demanding applications. This surface mount component, housed in a TO-236AB (SOT-23) package, features a collector-emitter breakdown voltage of 5V and a maximum collector current of 6.5mA. With a transition frequency of 5GHz and a maximum power dissipation of 32mW, it is suitable for RF amplification and switching circuits. The device exhibits a typical noise figure of 1.8dB to 2dB at 1GHz, and a minimum DC current gain (hFE) of 50 at 500µA and 1V. Operating at temperatures up to 175°C (TJ), this transistor is commonly utilized in wireless communication systems and general-purpose high-frequency designs. Supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature175°C (TJ)
Gain-
Power - Max32mW
Current - Collector (Ic) (Max)6.5mA
Voltage - Collector Emitter Breakdown (Max)5V
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 500µA, 1V
Frequency - Transition5GHz
Noise Figure (dB Typ @ f)1.8dB ~ 2dB @ 1GHz
Supplier Device PackageSOT-23 (TO-236AB)

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