BFT25,215
RF TRANS NPN 5V 2.3GHZ TO236ABManufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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The NXP USA Inc. BFT25-215 is an NPN bipolar RF transistor designed for high-frequency applications. This component features a collector-emitter breakdown voltage of 5V and can handle a maximum collector current of 6.5mA. With a transition frequency of 2.3GHz and a maximum power dissipation of 30mW, it is suitable for demanding RF circuitry. The device exhibits a minimum DC current gain of 20 at 1mA and 1V, and a typical noise figure of 5.5dB at 500MHz. Packaged in a surface mount SOT-23 (TO-236AB) form factor, it is supplied on tape and reel. This transistor is commonly utilized in wireless communication systems and other RF front-end designs. The operating junction temperature range extends to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 175°C (TJ) |
| Gain | - |
| Power - Max | 30mW |
| Current - Collector (Ic) (Max) | 6.5mA |
| Voltage - Collector Emitter Breakdown (Max) | 5V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 1mA, 1V |
| Frequency - Transition | 2.3GHz |
| Noise Figure (dB Typ @ f) | 5.5dB @ 500MHz |
| Supplier Device Package | SOT-23 (TO-236AB) |
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