Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar RF Transistors

BFS520,115

Banner
productimage

BFS520,115

RF TRANS NPN 15V 9GHZ SOT323-3

Manufacturer: NXP USA Inc.

Categories: Bipolar RF Transistors

Quality Control: Learn More

NXP USA Inc. BFS520-115 is an NPN bipolar RF transistor designed for high-frequency applications. This surface-mount device, packaged in an SC-70 (SOT-323) case, features a collector-emitter breakdown voltage of 15V and a maximum collector current of 70mA. With a transition frequency of 9GHz and a power dissipation of 300mW, it is suitable for demanding RF circuitry. The BFS520-115 exhibits a typical noise figure ranging from 1.1dB to 2.1dB at 900MHz and a minimum DC current gain (hFE) of 60 at 20mA and 6V. It operates at elevated temperatures, up to 175°C junction temperature. This component finds application in wireless communication systems and other RF front-end designs.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature175°C (TJ)
Gain-
Power - Max300mW
Current - Collector (Ic) (Max)70mA
Voltage - Collector Emitter Breakdown (Max)15V
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 20mA, 6V
Frequency - Transition9GHz
Noise Figure (dB Typ @ f)1.1dB ~ 2.1dB @ 900MHz
Supplier Device PackageSC-70

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
BLT70,115

RF TRANS NPN 8V 900MHZ SOT223

product image
BFG520,215

RF TRANS NPN 15V 9GHZ SOT143B

product image
BFU530AR

RF TRANS NPN 12V 11GHZ TO236AB