BFS505,115
RF TRANS NPN 15V 9GHZ SOT323-3Manufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. BFS505-115 is an NPN bipolar RF transistor designed for high-frequency applications. This surface-mount device, housed in an SC-70 (SOT-323) package, operates at frequencies up to 9GHz with a transition frequency of 9GHz. It features a collector-emitter breakdown voltage of 15V and a maximum collector current of 18mA. The BFS505-115 offers a typical DC current gain (hFE) of 60 at 5mA and 6V, with a power dissipation of 150mW. Noise figure specifications range from 1.2dB to 2.1dB at 900MHz. This component is suitable for use in wireless communication systems and other RF front-end circuitry. The device is supplied on a tape and reel (TR) for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 175°C (TJ) |
| Gain | - |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 18mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 6V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.2dB ~ 2.1dB @ 900MHz |
| Supplier Device Package | SC-70 |
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