BFS25A,115
RF TRANS NPN 5V 5GHZ SOT323-3Manufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. BFS25A-115 is an NPN bipolar RF transistor designed for high-frequency applications. This surface-mount device, packaged in an SC-70 (SOT-323) case, operates with a collector-emitter breakdown voltage of 5V and a maximum collector current of 6.5mA. It exhibits a transition frequency of 5GHz and can dissipate up to 32mW of power. The device offers a typical noise figure of 1.8dB to 2dB at 1GHz and a minimum DC current gain (hFE) of 50 at 500µA and 1V. The BFS25A-115 is suitable for use in wireless communication systems and other RF front-end circuitry. The component is supplied on a tape and reel for automated assembly.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 175°C (TJ) |
| Gain | - |
| Power - Max | 32mW |
| Current - Collector (Ic) (Max) | 6.5mA |
| Voltage - Collector Emitter Breakdown (Max) | 5V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500µA, 1V |
| Frequency - Transition | 5GHz |
| Noise Figure (dB Typ @ f) | 1.8dB ~ 2dB @ 1GHz |
| Supplier Device Package | SC-70 |
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