Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar RF Transistors

BFS17W,115

Banner
productimage

BFS17W,115

RF TRANS NPN 15V 1.6GHZ SOT323-3

Manufacturer: NXP USA Inc.

Categories: Bipolar RF Transistors

Quality Control: Learn More

NXP USA Inc. BFS17W-115 is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component, packaged in an SC-70 (SOT-323-3) tape and reel, operates with a collector-emitter breakdown voltage of 15V and a maximum collector current of 50mA. It exhibits a minimum DC current gain (hFE) of 25 at 2mA and 1V, with a transition frequency of 1.6GHz. The device offers a typical noise figure of 4.5dB at 500MHz and a maximum power dissipation of 300mW. Its robust operating temperature range extends up to 175°C (TJ). The BFS17W-115 is commonly utilized in wireless communication systems and RF front-end circuitry across various industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature175°C (TJ)
Gain-
Power - Max300mW
Current - Collector (Ic) (Max)50mA
Voltage - Collector Emitter Breakdown (Max)15V
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 2mA, 1V
Frequency - Transition1.6GHz
Noise Figure (dB Typ @ f)4.5dB @ 500MHz
Supplier Device PackageSC-70

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy