Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar RF Transistors

BFS17A,215

Banner
productimage

BFS17A,215

RF TRANS NPN 15V 2.8GHZ TO236AB

Manufacturer: NXP USA Inc.

Categories: Bipolar RF Transistors

Quality Control: Learn More

The NXP USA Inc. BFS17A-215 is an NPN bipolar RF transistor designed for high-frequency applications. Featuring a collector-emitter breakdown voltage of 15V and a maximum collector current of 25mA, this device offers a transition frequency of 2.8GHz. With a maximum power dissipation of 300mW, it is suitable for surface mount applications in the SOT-23 (TO-236AB) package. The BFS17A-215 exhibits a minimum DC current gain of 25 at 2mA and 1V, and a typical noise figure of 2.5dB at 800MHz. Operating temperatures can reach up to 150°C (TJ). This component is commonly utilized in telecommunications and wireless infrastructure. The BFS17A-215 is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain-
Power - Max300mW
Current - Collector (Ic) (Max)25mA
Voltage - Collector Emitter Breakdown (Max)15V
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 2mA, 1V
Frequency - Transition2.8GHz
Noise Figure (dB Typ @ f)2.5dB @ 800MHz
Supplier Device PackageSOT-23 (TO-236AB)

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy