BFS17,215
RF TRANS NPN 15V 1GHZ TO236ABManufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. BFS17-215 is an NPN bipolar RF transistor designed for high-frequency applications. It features a 15V collector-emitter breakdown voltage and a maximum collector current of 25mA. With a transition frequency of 1GHz and a power dissipation of 300mW, this device is suitable for RF amplification and switching circuits. The minimum DC current gain (hFE) is 25 at 2mA collector current and 1V Vce. The transistor exhibits a typical noise figure of 4.5dB at 500MHz. It is supplied in a SOT-23 (TO-236AB) surface mount package, delivered on tape and reel. This component finds application in telecommunications, wireless infrastructure, and consumer electronics. The operating junction temperature range is up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 25mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 2mA, 1V |
| Frequency - Transition | 1GHz |
| Noise Figure (dB Typ @ f) | 4.5dB @ 500MHz |
| Supplier Device Package | SOT-23 (TO-236AB) |
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