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BFR93AR,215

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BFR93AR,215

RF TRANS NPN 12V 6GHZ TO236AB

Manufacturer: NXP USA Inc.

Categories: Bipolar RF Transistors

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The NXP USA Inc. BFR93AR-215 is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component, packaged in a TO-236AB (SOT-23) configuration, operates with a collector-emitter breakdown voltage of 12V and a maximum collector current of 35mA. It features a high transition frequency of 6GHz and a maximum power dissipation of 300mW. The DC current gain (hFE) is a minimum of 40 at 30mA and 5V. Known for its performance, this transistor typically exhibits a noise figure between 1.9dB and 3dB across the 1GHz to 2GHz frequency range. Operating at elevated temperatures, it is rated for junction temperatures up to 175°C. The BFR93AR-215 is commonly utilized in wireless communication systems and other RF circuitry. This device is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature175°C (TJ)
Gain-
Power - Max300mW
Current - Collector (Ic) (Max)35mA
Voltage - Collector Emitter Breakdown (Max)12V
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 30mA, 5V
Frequency - Transition6GHz
Noise Figure (dB Typ @ f)1.9dB ~ 3dB @ 1GHz ~ 2GHz
Supplier Device PackageSOT-23 (TO-236AB)

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