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BFR540,215

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BFR540,215

RF TRANS NPN 15V 9GHZ TO236AB

Manufacturer: NXP USA Inc.

Categories: Bipolar RF Transistors

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NXP USA Inc. BFR540-215 is an NPN bipolar RF transistor designed for high-frequency applications. This component features a collector current of 120mA and a collector-emitter breakdown voltage of 15V. With a transition frequency of 9GHz and a maximum power dissipation of 500mW, it is suitable for demanding RF circuits. The device offers a minimum DC current gain (hFE) of 100 at 40mA and 8V. Its typical noise figure ranges from 1.3dB to 2.4dB at 900MHz. The BFR540-215 is housed in a TO-236-3, SC-59, SOT-23-3 (SOT-23) surface mount package and is supplied on a tape and reel. This transistor finds application in wireless communications, radar systems, and satellite communications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature175°C (TJ)
Gain-
Power - Max500mW
Current - Collector (Ic) (Max)120mA
Voltage - Collector Emitter Breakdown (Max)15V
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 40mA, 8V
Frequency - Transition9GHz
Noise Figure (dB Typ @ f)1.3dB ~ 2.4dB @ 900MHz
Supplier Device PackageSOT-23 (TO-236AB)

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