BFR520T,115
RF TRANS NPN 15V 9GHZ SC75Manufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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The NXP USA Inc. BFR520T-115 is an NPN bipolar RF transistor designed for high-frequency applications. This component features a collector-emitter breakdown voltage of 15V and a maximum collector current of 70mA. With a transition frequency of 9GHz and a maximum power dissipation of 150mW, it is suitable for demanding RF circuits. The device exhibits a minimum DC current gain (hFE) of 60 at 20mA and 6V, and a typical noise figure ranging from 1.1dB to 2.1dB at 900MHz. Packaged in an SC-75 (SOT-416) surface mount case, it is supplied on a tape and reel. This transistor is commonly utilized in telecommunications, wireless infrastructure, and consumer electronics. The operating junction temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-75, SOT-416 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 70mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 20mA, 6V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.1dB ~ 2.1dB @ 900MHz |
| Supplier Device Package | SC-75 |
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