Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar RF Transistors

BFR520,215

Banner
productimage

BFR520,215

RF TRANS NPN 15V 9GHZ TO236AB

Manufacturer: NXP USA Inc.

Categories: Bipolar RF Transistors

Quality Control: Learn More

The NXP USA Inc. BFR520-215 is an NPN bipolar RF transistor designed for high-frequency applications. This SOT-23 (TO-236AB) packaged device offers a collector-emitter breakdown voltage of 15V and a maximum collector current of 70mA. With a transition frequency of 9GHz and a maximum power dissipation of 300mW, it is suitable for demanding RF circuits. Key performance characteristics include a minimum DC current gain (hFE) of 60 at 20mA and 6V, and a typical noise figure range of 1.1dB to 2.1dB at 900MHz. The operating junction temperature range extends to 175°C. This component is commonly utilized in wireless communication infrastructure, satellite receivers, and other high-frequency signal processing systems. The BFR520-215 is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature175°C (TJ)
Gain-
Power - Max300mW
Current - Collector (Ic) (Max)70mA
Voltage - Collector Emitter Breakdown (Max)15V
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 20mA, 6V
Frequency - Transition9GHz
Noise Figure (dB Typ @ f)1.1dB ~ 2.1dB @ 900MHz
Supplier Device PackageSOT-23 (TO-236AB)

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
BLT70,115

RF TRANS NPN 8V 900MHZ SOT223

product image
BFG505/X,215

RF TRANS NPN 15V 9GHZ SOT143B

product image
BFG520,215

RF TRANS NPN 15V 9GHZ SOT143B