BFR505,215
RF TRANS NPN 15V 9GHZ TO236ABManufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. BFR505-215 is a high-frequency NPN bipolar RF transistor designed for demanding applications. This component features a collector-emitter breakdown voltage of 15V and a maximum collector current of 18mA. With a transition frequency reaching 9GHz, it is well-suited for RF amplification and switching circuits. The device offers a typical minimum DC current gain (hFE) of 60 at 5mA and 6V, with a noise figure ranging from 1.2dB to 2.1dB at 900MHz. Rated for a maximum power dissipation of 150mW, the BFR505-215 operates at junction temperatures up to 175°C. It is supplied in a SOT-23 (TO-236AB) surface mount package, presented on tape and reel. This transistor finds application in various wireless communication systems and RF front-end modules.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 175°C (TJ) |
| Gain | - |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 18mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 6V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.2dB ~ 2.1dB @ 900MHz |
| Supplier Device Package | SOT-23 (TO-236AB) |
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