BFR106,215
RF TRANS NPN 15V 5GHZ TO236ABManufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. BFR106-215 is an NPN bipolar RF transistor designed for high-frequency applications. This component features a collector-emitter breakdown voltage of 15V and a maximum collector current of 100mA. With a transition frequency of 5GHz and a power dissipation capability of 500mW, it is suitable for demanding RF circuits. The device exhibits a typical noise figure of 3.5dB at 800MHz and offers a minimum DC current gain (hFE) of 25 at 50mA and 9V. Supplied in a SOT-23 (TO-236AB) surface mount package on a tape and reel, the BFR106-215 is engineered for operational temperatures up to 175°C (TJ). This transistor finds application in various wireless communication systems and RF amplification stages.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 175°C (TJ) |
| Gain | - |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 50mA, 9V |
| Frequency - Transition | 5GHz |
| Noise Figure (dB Typ @ f) | 3.5dB @ 800MHz |
| Supplier Device Package | SOT-23 (TO-236AB) |
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