BFQ67W,115
RF TRANS NPN 10V 8GHZ SOT323-3Manufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. BFQ67W-115 is an NPN bipolar RF transistor designed for demanding applications. This component operates at a collector-emitter breakdown voltage of 10V and a maximum collector current of 50mA. Featuring a transition frequency of 8GHz and a maximum power dissipation of 300mW, it is supplied in an SC-70 (SOT-323) surface mount package, presented on tape and reel. The BFQ67W-115 exhibits a typical noise figure ranging from 1.3dB to 3dB across the 1GHz to 2GHz frequency spectrum, with a minimum DC current gain (hFE) of 60 at 15mA and 5V. This device is suitable for use in wireless communication systems and other high-frequency electronics. Its operating junction temperature range extends up to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 175°C (TJ) |
| Gain | - |
| Power - Max | 300mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 15mA, 5V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 1.3dB ~ 3dB @ 1GHz ~ 2GHz |
| Supplier Device Package | SC-70 |
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