BFM520,115
RF TRANS 2 NPN 8V 9GHZ 6TSSOPManufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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The NXP USA Inc. BFM520-115 is a dual NPN bipolar RF transistor designed for high-frequency applications. Operating with a collector-emitter breakdown voltage of 8V and a maximum collector current of 70mA, this device exhibits a transition frequency of 9GHz. It offers a typical power output of 1W with a minimum DC current gain of 60 at 20mA and 6V. The noise figure ranges from 1.2dB to 2.1dB at 900MHz. This component is housed in a 6-TSSOP package and is supplied on tape and reel. It is suitable for use in wireless infrastructure and general-purpose RF designs. The operating junction temperature can reach up to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 175°C (TJ) |
| Gain | - |
| Power - Max | 1W |
| Current - Collector (Ic) (Max) | 70mA |
| Voltage - Collector Emitter Breakdown (Max) | 8V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 20mA, 6V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.2dB ~ 2.1dB @ 900MHz |
| Supplier Device Package | 6-TSSOP |
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