BFM505,115
RF TRANS 2 NPN 8V 9GHZ 6TSSOPManufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. Bipolar RF Transistors, part number BFM505-115, is a dual NPN RF transistor designed for high-frequency applications. This surface mount component features a collector-emitter breakdown voltage of 8V and a maximum collector current of 18mA. With a transition frequency of 9GHz and a maximum power dissipation of 500mW, it is suitable for demanding RF designs. The device exhibits a typical noise figure ranging from 1.1dB to 1.9dB across frequencies of 900MHz to 2GHz. The minimum DC current gain (hFE) is 60 at 5mA and 6V. Packaged in a 6-TSSOP, SC-88, SOT-363 configuration, it operates at temperatures up to 175°C. This component finds application in wireless communication systems and other high-frequency electronic equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 175°C (TJ) |
| Gain | - |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 18mA |
| Voltage - Collector Emitter Breakdown (Max) | 8V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 6V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.1dB ~ 1.9dB @ 900MHz ~ 2GHz |
| Supplier Device Package | 6-TSSOP |
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