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BFG97,115

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BFG97,115

RF TRANS NPN 15V 5.5GHZ SOT223

Manufacturer: NXP USA Inc.

Categories: Bipolar RF Transistors

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The NXP USA Inc. BFG97-115 is an NPN bipolar RF transistor designed for high-frequency applications. This component offers a collector-emitter breakdown voltage of 15V and a maximum collector current of 100mA. With a transition frequency of 5.5GHz, it is suitable for use in demanding RF circuits. The device features a minimum DC current gain (hFE) of 25 at 70mA and 10V. Rated for a maximum power dissipation of 1W, the BFG97-115 operates at an elevated junction temperature of up to 175°C. It is provided in a Surface Mount package, specifically the TO-261-4, TO-261AA (SC-73) footprint, supplied on a Tape & Reel (TR). This transistor is utilized in wireless communications and radio frequency amplification systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature175°C (TJ)
Gain-
Power - Max1W
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)15V
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 70mA, 10V
Frequency - Transition5.5GHz
Noise Figure (dB Typ @ f)-
Supplier Device PackageSC-73

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