Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar RF Transistors

BFG94,115

Banner
productimage

BFG94,115

RF TRANS NPN 12V 6GHZ SOT223

Manufacturer: NXP USA Inc.

Categories: Bipolar RF Transistors

Quality Control: Learn More

NXP USA Inc. BFG94-115 is a bipolar RF transistor, NPN type, designed for high-frequency applications. This component features a collector-emitter breakdown voltage of 12V and a maximum collector current of 60mA. With a transition frequency of 6GHz and a maximum power dissipation of 700mW, the BFG94-115 is suitable for demanding RF circuits. Its typical noise figure ranges from 2.7dB to 3dB across the 500MHz to 1GHz frequency spectrum, with a minimum DC current gain (hFE) of 45 at 30mA and 5V. The transistor is housed in a surface mount SC-73 package (TO-261-4, TO-261AA) and supplied on tape and reel. This component finds application in wireless infrastructure, satellite communication systems, and radar technology. The operating junction temperature can reach up to 175°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature175°C (TJ)
Gain-
Power - Max700mW
Current - Collector (Ic) (Max)60mA
Voltage - Collector Emitter Breakdown (Max)12V
DC Current Gain (hFE) (Min) @ Ic, Vce45 @ 30mA, 5V
Frequency - Transition6GHz
Noise Figure (dB Typ @ f)2.7dB ~ 3dB @ 500MHz ~ 1GHz
Supplier Device PackageSC-73

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
BLT70,115

RF TRANS NPN 8V 900MHZ SOT223

product image
BFU550AR

RF TRANS NPN 12V 11GHZ TO236AB

product image
BFG505/X,215

RF TRANS NPN 15V 9GHZ SOT143B