Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Bipolar RF Transistors

BFG93A/X,215

Banner
productimage

BFG93A/X,215

RF TRANS NPN 12V 6GHZ SOT143B

Manufacturer: NXP USA Inc.

Categories: Bipolar RF Transistors

Quality Control: Learn More

NXP USA Inc. BFG93A-X-215 is an NPN bipolar RF transistor designed for high-frequency applications. This device operates with a collector-emitter breakdown voltage of 12V and a maximum collector current of 35mA. It exhibits a transition frequency of 6GHz and a maximum power dissipation of 300mW. The DC current gain (hFE) is a minimum of 40 at 30mA and 5V. Featuring a typical noise figure ranging from 1.7dB to 2.3dB across 1GHz to 2GHz, this transistor is suitable for demanding RF circuitry. The BFG93A-X-215 is supplied in a SOT-143B surface mount package, also known as TO-253-4 or TO-253AA, and is available on tape and reel. Its operating temperature range extends to 175°C (TJ). This component finds application in wireless infrastructure, satellite communications, and other advanced RF systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-253-4, TO-253AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature175°C (TJ)
Gain-
Power - Max300mW
Current - Collector (Ic) (Max)35mA
Voltage - Collector Emitter Breakdown (Max)12V
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 30mA, 5V
Frequency - Transition6GHz
Noise Figure (dB Typ @ f)1.7dB ~ 2.3dB @ 1GHz ~ 2GHz
Supplier Device PackageSOT-143B

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
BLT70,115

RF TRANS NPN 8V 900MHZ SOT223

product image
BFG520,215

RF TRANS NPN 15V 9GHZ SOT143B

product image
BFU530AR

RF TRANS NPN 12V 11GHZ TO236AB