BFG67/X,215
RF TRANS NPN 10V 8GHZ SOT143BManufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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The NXP USA Inc. BFG67-X-215 is an NPN bipolar RF transistor designed for high-frequency applications. This component offers a collector current of 50mA and a collector-emitter breakdown voltage of 10V. Featuring a transition frequency of 8GHz and a maximum power dissipation of 380mW, it is suitable for demanding RF designs. The device exhibits a typical noise figure of 1.3dB at 1GHz and a minimum DC current gain (hFE) of 60 at 15mA and 5V. Packaged in an SOT-143B (TO-253-4) surface mount configuration and supplied on tape and reel, the BFG67-X-215 operates across a wide temperature range up to 175°C. This transistor is commonly utilized in wireless communication systems and general-purpose RF amplification circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-253-4, TO-253AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 175°C (TJ) |
| Gain | - |
| Power - Max | 380mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 10V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 15mA, 5V |
| Frequency - Transition | 8GHz |
| Noise Figure (dB Typ @ f) | 1.3dB @ 1GHz |
| Supplier Device Package | SOT-143B |
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