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BFG591,115

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BFG591,115

RF TRANS NPN 15V 7GHZ SOT223

Manufacturer: NXP USA Inc.

Categories: Bipolar RF Transistors

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NXP USA Inc. BFG591-115 is an NPN bipolar RF transistor designed for demanding RF applications. This device boasts a 7GHz transition frequency and a 15V collector-emitter breakdown voltage, making it suitable for high-frequency amplification and switching tasks. With a maximum collector current of 200mA and a power dissipation capability of 2W, it delivers robust performance. The BFG591-115 features a minimum DC current gain of 60 at 70mA and 8V. Packaged in a compact TO-261-4 (SC-73) surface mount configuration, it is supplied on tape and reel for efficient automated assembly. This component finds application in wireless communication systems, radar, and other RF front-end circuitry operating across various industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain-
Power - Max2W
Current - Collector (Ic) (Max)200mA
Voltage - Collector Emitter Breakdown (Max)15V
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 70mA, 8V
Frequency - Transition7GHz
Noise Figure (dB Typ @ f)-
Supplier Device PackageSC-73

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