BFG590/X,215
RF TRANS NPN 15V 5GHZ SOT143BManufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. BFG590-X-215 is an NPN bipolar RF transistor designed for high-frequency applications. This component features a collector-emitter breakdown voltage of 15V and a maximum collector current of 200mA. With a transition frequency of 5GHz and a maximum power dissipation of 400mW, it is suitable for demanding RF circuitry. The device offers a minimum DC current gain (hFE) of 60 at 70mA and 8V. Its operating junction temperature can reach 175°C. The BFG590-X-215 is supplied in a SOT-143B surface mount package, presented on tape and reel. This transistor finds application in communication systems and other RF signal processing circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-253-4, TO-253AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 175°C (TJ) |
| Gain | - |
| Power - Max | 400mW |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 70mA, 8V |
| Frequency - Transition | 5GHz |
| Noise Figure (dB Typ @ f) | - |
| Supplier Device Package | SOT-143B |
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