BFG541,115
RF TRANS NPN 15V 9GHZ SOT223Manufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc.'s BFG541-115 is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component, housed in an SC-73 (TO-261-4, TO-261AA) package, features a collector current capability of 120mA and a collector-emitter breakdown voltage of 15V. The device exhibits a transition frequency of 9GHz and a maximum power dissipation of 650mW. With a typical noise figure ranging from 1.3dB to 2.4dB at 900MHz, it is suitable for demanding RF circuitry. The BFG541-115 is commonly employed in wireless communications infrastructure and high-frequency amplification stages. It operates at junction temperatures up to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 175°C (TJ) |
| Gain | - |
| Power - Max | 650mW |
| Current - Collector (Ic) (Max) | 120mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 40mA, 8V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.3dB ~ 2.4dB @ 900MHz |
| Supplier Device Package | SC-73 |
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