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BFG540W/XR,135

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BFG540W/XR,135

RF TRANS NPN 15V 9GHZ CMPAK-4

Manufacturer: NXP USA Inc.

Categories: Bipolar RF Transistors

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NXP USA Inc. BFG540W-XR-135 is an NPN bipolar RF transistor designed for high-frequency applications. This component operates with a collector-emitter breakdown voltage of 15V and a maximum collector current of 120mA. It exhibits a transition frequency of 9GHz, making it suitable for demanding RF circuits. The device offers a typical DC current gain (hFE) of 100 at 40mA and 8V, with a maximum power dissipation of 500mW. Noise figure performance ranges from 1.3dB to 2.4dB at 900MHz. The BFG540W-XR-135 is housed in a CMPAK-4 surface mount package, specifically SC-82A, SOT-343, and is supplied on tape and reel (TR). This transistor is commonly utilized in wireless communication systems, RF amplifiers, and other signal processing applications. Operating temperature for the junction is rated up to 175°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-82A, SOT-343
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature175°C (TJ)
Gain-
Power - Max500mW
Current - Collector (Ic) (Max)120mA
Voltage - Collector Emitter Breakdown (Max)15V
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 40mA, 8V
Frequency - Transition9GHz
Noise Figure (dB Typ @ f)1.3dB ~ 2.4dB @ 900MHz
Supplier Device PackageCMPAK-4

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