BFG540W/X,115
RF TRANS NPN 15V 9GHZ CMPAK-4Manufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. BFG540W-X-115 is an NPN bipolar RF transistor designed for high-frequency applications. This surface mount component, housed in a CMPAK-4 package (SC-82A, SOT-343), operates at frequencies up to 9GHz with a transition frequency of 9GHz. It handles a collector current (Ic) of up to 120mA and offers a maximum collector emitter breakdown voltage of 15V. The device provides a minimum DC current gain (hFE) of 100 at 40mA and 8V, with a typical noise figure ranging from 1.3dB to 2.4dB at 900MHz. The maximum power dissipation is 500mW, and it is rated for operation at temperatures up to 175°C (TJ). This transistor is commonly utilized in wireless communication infrastructure, satellite communications, and radar systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82A, SOT-343 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 175°C (TJ) |
| Gain | - |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 120mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 40mA, 8V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.3dB ~ 2.4dB @ 900MHz |
| Supplier Device Package | CMPAK-4 |
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