BFG540W,115
RF TRANS NPN 15V 9GHZ 4SOManufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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The NXP USA Inc. BFG540W-115 is an NPN bipolar RF transistor designed for high-frequency applications. This component offers a collector-emitter breakdown voltage of 15V and a maximum collector current of 120mA. Its transition frequency reaches 9GHz, making it suitable for demanding RF designs. With a maximum power dissipation of 500mW and a typical noise figure ranging from 1.3dB to 1.8dB at 900MHz, the BFG540W-115 excels in performance. The device features a minimum DC current gain (hFE) of 100 at 40mA and 8V. It is supplied in a 4-SO package, specifically a SOT-343 reverse pinning configuration, and is available on tape and reel. This transistor finds application in wireless communication systems and other RF front-end circuitry. The operating junction temperature can reach 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-343 Reverse Pinning |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 175°C (TJ) |
| Gain | - |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 120mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 40mA, 8V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.3dB ~ 1.8dB @ 900MHz |
| Supplier Device Package | 4-SO |
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