BFG540/XR,215
RF TRANS NPN 15V 9GHZ SOT143RManufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. BFG540-XR-215 is a high-performance NPN bipolar RF transistor designed for demanding applications. This device offers a 15V collector-emitter breakdown voltage and operates at a transition frequency of 9GHz, enabling efficient amplification in high-frequency circuits. With a maximum collector current of 120mA and a power dissipation of 400mW, it is well-suited for power management and signal amplification tasks. The transistor exhibits a minimum DC current gain (hFE) of 100 at 40mA and 8V, and a typical noise figure ranging from 1.3dB to 2.4dB at 900MHz. Packaged in a compact SOT-143R surface-mount configuration and supplied on tape and reel, the BFG540-XR-215 is ideal for use in wireless communication systems, radar, and other high-frequency electronic equipment. Its operational temperature range extends up to 150°C, ensuring reliability in challenging environments.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-143R |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 400mW |
| Current - Collector (Ic) (Max) | 120mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 40mA, 8V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.3dB ~ 2.4dB @ 900MHz |
| Supplier Device Package | SOT-143R |
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