BFG540/X,215
RF TRANS NPN 15V 9GHZ SOT143BManufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. BFG540-X-215 is an NPN bipolar RF transistor designed for high-frequency applications. This component features a collector-emitter breakdown voltage of 15V and a maximum collector current of 120mA. With a transition frequency (fT) of 9GHz, it is well-suited for demanding RF circuitry. The device offers a minimum DC current gain (hFE) of 60 at 40mA and 8V. Power dissipation is rated at 400mW. The BFG540-X-215 is housed in a SOT-143B surface mount package, suitable for automated assembly processes. Noise figure specifications range from 1.3dB to 2.4dB typically at 900MHz. This transistor is commonly utilized in wireless communication systems, including mobile infrastructure and point-to-point radio links, as well as in broadband test and measurement equipment. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-253-4, TO-253AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | - |
| Power - Max | 400mW |
| Current - Collector (Ic) (Max) | 120mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 40mA, 8V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.3dB ~ 2.4dB @ 900MHz |
| Supplier Device Package | SOT-143B |
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