BFG520W/X,115
RF TRANS NPN 15V 9GHZ 4SOManufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. BFG520W-X-115 is an NPN bipolar RF transistor designed for high-frequency applications. Operating at a collector-emitter breakdown voltage of 15V, this component features a transition frequency of 9GHz and a maximum collector current of 70mA. The device offers a minimum DC current gain (hFE) of 60 at 20mA and 6V. With a power dissipation capability of 500mW, it is packaged in a 4-SO (SOT-343 Reverse Pinning) format, supplied on tape and reel. Typical noise figures range from 1.1dB to 2.1dB at 900MHz. This transistor is suitable for use in wireless communication systems and other RF circuitry requiring robust performance at elevated temperatures, up to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-343 Reverse Pinning |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 175°C (TJ) |
| Gain | - |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 70mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 20mA, 6V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.1dB ~ 2.1dB @ 900MHz |
| Supplier Device Package | 4-SO |
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