BFG520W,115
RF TRANS NPN 15V 9GHZ 4SOManufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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The NXP USA Inc. BFG520W-115 is an NPN bipolar RF transistor designed for high-frequency applications. This surface-mount device operates within a 15V collector-emitter breakdown voltage and can handle a maximum collector current of 70mA. Featuring a transition frequency of 9GHz, it offers a minimum DC current gain of 60 at 20mA and 6V. The maximum power dissipation is rated at 500mW. Typical noise figures range from 1.1dB to 2.1dB at 900MHz, making it suitable for demanding RF front-end designs. The BFG520W-115 is supplied in a 4-SO package, specifically SOT-343 reverse pinning, and is available on tape and reel. This component finds application in wireless communication systems and other high-frequency circuitry.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-343 Reverse Pinning |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 175°C (TJ) |
| Gain | - |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 70mA |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 20mA, 6V |
| Frequency - Transition | 9GHz |
| Noise Figure (dB Typ @ f) | 1.1dB ~ 2.1dB @ 900MHz |
| Supplier Device Package | 4-SO |
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