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BFG425W,135

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BFG425W,135

RF TRANS NPN 4.5V 25GHZ CMPAK-4

Manufacturer: NXP USA Inc.

Categories: Bipolar RF Transistors

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NXP USA Inc. BFG425W-135 is an NPN bipolar RF transistor designed for high-frequency applications. This component operates with a collector-emitter breakdown voltage of 4.5V and a maximum collector current of 30mA. It features a transition frequency (fT) of 25GHz, enabling efficient signal amplification at microwave frequencies. With a typical gain of 20dB and a low noise figure ranging from 0.8dB to 1.2dB across the 900MHz to 2GHz spectrum, the BFG425W-135 is suitable for demanding RF front-end designs. The device is supplied in a CMPAK-4 (SC-82A, SOT-343) surface mount package, delivered on tape and reel. Its robust construction allows for operation up to 150°C junction temperature, making it a reliable choice for wireless infrastructure, satellite communications, and radar systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-82A, SOT-343
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain20dB
Power - Max135mW
Current - Collector (Ic) (Max)30mA
Voltage - Collector Emitter Breakdown (Max)4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 25mA, 2V
Frequency - Transition25GHz
Noise Figure (dB Typ @ f)0.8dB ~ 1.2dB @ 900MHz ~ 2GHz
Supplier Device PackageCMPAK-4

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