BFG425W,135
RF TRANS NPN 4.5V 25GHZ CMPAK-4Manufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. BFG425W-135 is an NPN bipolar RF transistor designed for high-frequency applications. This component operates with a collector-emitter breakdown voltage of 4.5V and a maximum collector current of 30mA. It features a transition frequency (fT) of 25GHz, enabling efficient signal amplification at microwave frequencies. With a typical gain of 20dB and a low noise figure ranging from 0.8dB to 1.2dB across the 900MHz to 2GHz spectrum, the BFG425W-135 is suitable for demanding RF front-end designs. The device is supplied in a CMPAK-4 (SC-82A, SOT-343) surface mount package, delivered on tape and reel. Its robust construction allows for operation up to 150°C junction temperature, making it a reliable choice for wireless infrastructure, satellite communications, and radar systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82A, SOT-343 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 20dB |
| Power - Max | 135mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 4.5V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 25mA, 2V |
| Frequency - Transition | 25GHz |
| Noise Figure (dB Typ @ f) | 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz |
| Supplier Device Package | CMPAK-4 |