BFG425W,115
RF TRANS NPN 4.5V 25GHZ CMPAK-4Manufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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The NXP USA Inc. BFG425W-115 is an NPN bipolar RF transistor designed for high-frequency applications. This component features a maximum collector-emitter breakdown voltage of 4.5V and a maximum collector current of 30mA, with a typical DC current gain (hFE) of 50 at 25mA and 2V. The transistor offers a transition frequency of 25GHz and a gain of 20dB. Its noise figure is rated at 0.8dB to 1.2dB across the 900MHz to 2GHz frequency range. With a maximum power dissipation of 135mW, it is suitable for operation up to 150°C (TJ). The BFG425W-115 is provided in a CMPAK-4 (SC-82A, SOT-343) surface mount package, supplied on tape and reel. This device is utilized in wireless infrastructure, radar, and high-frequency communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82A, SOT-343 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 20dB |
| Power - Max | 135mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 4.5V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 25mA, 2V |
| Frequency - Transition | 25GHz |
| Noise Figure (dB Typ @ f) | 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz |
| Supplier Device Package | CMPAK-4 |
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