BFG424F,115
RF TRANS NPN 4.5V 25GHZ 4SOManufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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The **NXP USA Inc. BFG424F-115** is an NPN bipolar RF transistor designed for high-frequency applications. This component boasts a transition frequency of 25GHz and a maximum collector current of 30mA, with a power dissipation of 135mW. It features a typical gain of 23dB and a low noise figure, ranging from 0.8dB to 1.2dB across the 900MHz to 2GHz spectrum. The device operates with a collector-emitter breakdown voltage of 4.5V and a minimum DC current gain (hFE) of 50 at 25mA and 2V. Supplied in a 4-SO package with SOT-343 reverse pinning, it is available on tape and reel for efficient surface mounting. This transistor is suitable for use in various RF and microwave circuits, including broadband amplifiers and frequency mixers across telecommunications and wireless infrastructure industries. It operates reliably at junction temperatures up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-343 Reverse Pinning |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 23dB |
| Power - Max | 135mW |
| Current - Collector (Ic) (Max) | 30mA |
| Voltage - Collector Emitter Breakdown (Max) | 4.5V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 25mA, 2V |
| Frequency - Transition | 25GHz |
| Noise Figure (dB Typ @ f) | 0.8dB ~ 1.2dB @ 900MHz ~ 2GHz |
| Supplier Device Package | 4-SO |
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