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BFG410W,135

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BFG410W,135

RF TRANS NPN 4.5V 22GHZ CMPAK-4

Manufacturer: NXP USA Inc.

Categories: Bipolar RF Transistors

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NXP USA Inc. BFG410W-135 is an NPN bipolar RF transistor designed for high-frequency applications. This component offers a collector-emitter breakdown voltage of 4.5V and a maximum collector current of 12mA. It features a transition frequency of 22GHz and a typical gain of 21dB. The noise figure ranges from 0.9dB to 1.2dB across the 900MHz to 2GHz frequency spectrum. The BFG410W-135 is housed in a CMPAK-4 (SC-82A, SOT-343) surface mount package, supplied on tape and reel. This transistor is suitable for use in wireless communication systems and other demanding RF circuitry, operating at temperatures up to 150°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-82A, SOT-343
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Gain21dB
Power - Max54mW
Current - Collector (Ic) (Max)12mA
Voltage - Collector Emitter Breakdown (Max)4.5V
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 2V
Frequency - Transition22GHz
Noise Figure (dB Typ @ f)0.9dB ~ 1.2dB @ 900MHz ~ 2GHz
Supplier Device PackageCMPAK-4

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