BFG410W,115
RF TRANS NPN 4.5V 22GHZ CMPAK-4Manufacturer: NXP USA Inc.
Categories: Bipolar RF Transistors
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NXP USA Inc. BFG410W-115 is an NPN bipolar RF transistor designed for high-frequency applications. This component operates with a collector-emitter breakdown voltage of 4.5V and a maximum collector current of 12mA. It exhibits a transition frequency of 22GHz, making it suitable for demanding RF circuits. The device offers a typical gain of 21dB and a low noise figure, ranging from 0.9dB to 1.2dB across the 900MHz to 2GHz spectrum. With a maximum power dissipation of 54mW, it is packaged in a CMPAK-4 surface mount configuration (SC-82A, SOT-343) and supplied on tape and reel. This transistor finds application in wireless communication systems and other high-frequency electronic designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-82A, SOT-343 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Gain | 21dB |
| Power - Max | 54mW |
| Current - Collector (Ic) (Max) | 12mA |
| Voltage - Collector Emitter Breakdown (Max) | 4.5V |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 10mA, 2V |
| Frequency - Transition | 22GHz |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.2dB @ 900MHz ~ 2GHz |
| Supplier Device Package | CMPAK-4 |
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